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Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 2)
w DSS
Single Pulse Drain-Source
V DD = 25 V, I D = 12 A
72
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche Current
12
A
Off Characteristics
BV DSS Drain-Source Breakdown
V GS = 0 V, I D = 250 μ A
60
V
? BV DSS
? T J
I DSS
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A, Referenced to 25 ° C
V DS = 60 V, V GS = 0 V
55
10
mV/ ° C
μ A
V DS = 60 V, V GS = 0 V, T J =
150 ° C
100
I GSSF
Gate-Body Leakage Current,
V GS = 15 V, V DS = 0 V
100
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -15 V, V DS = 0 V
-100
nA
Reverse
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
1
1.6
2
V
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
I D = 250 μ A, Referenced to 25 ° C
V GS = 5 V,I D = 6 A,
-4
0.100
0.180
mV/ ° C
?
On-Resistance
V DS(on)
Drain-Source On-Voltage
V GS = 5 V,I D = 12 A
2.6
V
On-Resistance
g FS
Forward Transconductance
V DS = 8 V, I D = 6 A
5
8.7
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
345
110
30
570
160
40
pF
pF
pF
Switchin g Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 30 V, I D = 12 A,
V GS = 5 V, R GEN = 9.1 ?
20
190
30
90
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 48 V,
I D = 12 A, V GS = 5 V
7.8
1.7
3.2
10
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
(Note 2)
12
42
A
A
V SD
t rr
Drain-Source Diode Forward
Voltage
Drain-Source Reverse Recovery
V GS = 0 V, I S = 12 A
I F =12 A, di/dt = 100A/ μ s
(Note 2)
55
1.3
V
nS
Time
Notes:
1. R θ JA is the sum of the juntion-to-case and case-to-ambient thermal resistance.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
MTP3055VL Rev. A1
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